Summary of WORLD’S FIRST MOS FET RELAY MODULE “G3VM-21MT” WITH SOLID STATE RELAY IN “T-TYPE CIRCUIT STRUCTURE”
OMRON released the G3VM-21MT, a world-first MOS FET relay module featuring a T-type circuit structure to minimize leakage current in semiconductor test equipment. This compact, surface-mount component enhances measurement precision and reduces maintenance needs while saving PCB space.
Parts used in the G3VM-21MT:
- MOS FET relay
- T-type circuit structure
- Compact-size solid-state relays
- Three MOS FET relays
- Print circuit board
OMRON Corporation of Kyoto, western Japan globally released its new MOS FET (*1) relay module “G3VM-21MT” on December 2, 2019.
The product is the first electronic component in the world (2) to adopt a “T-type circuit structure” (3). With a T-type circuit structure consisting of compact-size and longer-lifecycle solid-state relays that output signals using no physical contact, the relay module minimizes the leakage current (*4) that has long been a problem with semiconductor test equipment. G3VM-21MT allows high-precision measurement and improves the productivity of electronic components.
Features
- Contribute to reduce the mounting space on the print circuit board by small package
- Current leakage when the main line is open and sub line is close :1 pA (Maximum) at VOFF =20 V
- Contact form: 1a (SPST-NO) + T-switch function
- Surface-mounting
G3VM-21MT enables switching measurement signals in test equipment mainly used to perform electrical tests for semiconductor devices. In addition to the MOS FET relay features of compact size and longer lifecycle, G3VM-21MT is the world’s first MOS FET relay module with “T-type circuit structure” which consists of three MOS FET relays that help reduce the leakage current to a minimal level without affecting test equipment’s inspection accuracy while allowing high-precision measurement and decreasing maintenance frequency of test equipment.
Read more: WORLD’S FIRST MOS FET RELAY MODULE “G3VM-21MT” WITH SOLID STATE RELAY IN “T-TYPE CIRCUIT STRUCTURE”
- What is the G3VM-21MT?
It is a new MOS FET relay module released by OMRON Corporation that features a T-type circuit structure. - How does the T-type circuit structure help?
It minimizes leakage current without affecting inspection accuracy, allowing for high-precision measurement. - Can this device reduce mounting space?
Yes, its small package contributes to reducing the mounting space on the print circuit board. - What is the maximum current leakage when open?
The current leakage is 1 pA (Maximum) at VOFF = 20 V when the main line is open and sub line is close. - Does it use physical contact to output signals?
No, the solid-state relays output signals using no physical contact. - What contact form does the module have?
The contact form is 1a (SPST-NO) plus a T-switch function. - Is the G3VM-21MT designed for surface mounting?
Yes, the product supports surface-mounting. - How does this module affect maintenance frequency?
It decreases the maintenance frequency of test equipment. - What type of tests is this module mainly used for?
It enables switching measurement signals in test equipment used for electrical tests for semiconductor devices. - Why was this module developed?
It was developed to solve the long-standing problem of leakage current in semiconductor test equipment.
