Diodes Incorporated introduced DMT47M2LDVQ automotive compliant 40V dual MOSFET in a 3.3mm x 3.3mm package for automotive systems. It smartly integrates two n-channel enhancement-mode MOSFETs with the lowest RDS(ON) (10.9mΩ at VGS of 10V and ID of 30.2A).
The low on-resistance conduction helps in keeping the losses to a minimum in applications like wireless charging or motor control. Besides, switching losses are minimized with the help of a typical gate charge of 14.0nC, at a VGS of 10V and ID of 20A.
The thermally efficient PowerDI 3333-8 package of the device returns a junction-to-case thermal resistance (Rthjc) of 8.43°C/W, thereby enabling the development of end applications with a higher power density than with MOSFETs packaged individually. Furthermore, the PCB area needed for implementing automotive features including ADAS is reduced too.
Key Features Of DMT47M2LDVQ Dual MOSFET:
- Fast switching speed
- 100% unclamped inductive switching
- High conversion efficiency
- Low RDS(ON) that minimizes on-state losses
- RDS(ON): 10.9mΩ at VGS of 10V and ID of 30.2A
- Low input capacitance
- Two n-channel enhancement mode
- Thermally efficient PowerDI 3333-8 package