MHz, GaN HEMT for L-Band Radar Systems

Features

• Reference design amplifier 1.2 – 1.4-GHz operation
• FET tuning range UHF through 1800 MHz
• 500-W typical output power
• 17-dB power gain
• 67% typical drain efficiency
• <0.3-dB pulsed amplitude droop
• Internally pre-matched on input, unmatched output

• Radar

Cree has released a 500W gallium nitride HEMTs for 1.2-1.4GHz L-Band radar amplifier systems.

Called CGHV14500, it also has a 250W partner, the CGHV14250.

According to the firm, they have “the highest known L-Band efficiency performance at 85°C”.

Applications are foreseen between UHF and 1.8GHz in: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and military telemetry.

The devices are being made on Cree’s 50V 0.4µm GaN-on-SiC foundry and are available in ceramic/metal flange and pill packages – claimed to be smaller than competing GaAs or silicon RF technology.

Inputs are internally pre-matched, and the 500W device has 17dB power gain and 70% typical drain efficiency at 85°C.

The 250W device, said Cree, features 330W typical output power as well as 18dB power gain and 77% typical drain efficiency.

– See more at: http://www.electronicsweekly.com/news/components/analogue-and-discretes/cree-aims-at-the-military-with-half-kilowatt-gan-hemt-2013-08/#sthash.lqORXFC0.dpuf