Summary of MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14500 is a 50 V GaN HEMT optimized for 1.2–1.4 GHz L‑Band radar amplifiers, offering high efficiency, high gain and wide bandwidth. The 500 W device provides ~17 dB gain and ~67–70% drain efficiency (85°C), with internally pre‑matched input and unmatched output; available in ceramic/metal flange and pill packages. A 250 W partner (CGHV14250) offers ~330 W typical, 18 dB gain and ~77% efficiency. Targets include radar, TACAN, IFF, and military telemetry across UHF to 1.8 GHz.
Parts used in the CGHV14500 Project:
- Cree CGHV14500 GaN HEMT (500 W)
- Package: ceramic/metal flange
- Package: pill package
- Cree CGHV14250 GaN HEMT (250 W) – partner device
- GaN-on-SiC 50 V 0.4 µm foundry process (device technology)
Features
- Reference design amplifier 1.2 – 1.4-GHz operation
- FET tuning range UHF through 1800 MHz
- 500-W typical output power
- 17-dB power gain
- 67% typical drain efficiency
- <0.3-dB pulsed amplitude droop
- Internally pre-matched on input, unmatched output
Applications
– See more at: http://www.cree.com/rf/products/sband-xband-cband/packaged-discrete-transistors/cghv14500#sthash.rYAwUlER.dpuf
Cree has released a 500W gallium nitride HEMTs for 1.2-1.4GHz L-Band radar amplifier systems.
Called CGHV14500, it also has a 250W partner, the CGHV14250.
According to the firm, they have “the highest known L-Band efficiency performance at 85°C”.
Applications are foreseen between UHF and 1.8GHz in: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and military telemetry.
The devices are being made on Cree’s 50V 0.4µm GaN-on-SiC foundry and are available in ceramic/metal flange and pill packages – claimed to be smaller than competing GaAs or silicon RF technology.
Inputs are internally pre-matched, and the 500W device has 17dB power gain and 70% typical drain efficiency at 85°C.
The 250W device, said Cree, features 330W typical output power as well as 18dB power gain and 77% typical drain efficiency.
– See more at: http://www.electronicsweekly.com/news/components/analogue-and-discretes/cree-aims-at-the-military-with-half-kilowatt-gan-hemt-2013-08/#sthash.lqORXFC0.dpuf
- What frequency range is the CGHV14500 designed for?
The CGHV14500 is designed specifically for 1.2–1.4 GHz L‑Band operation and can be used from UHF through 1800 MHz. - What output power does the CGHV14500 provide?
The CGHV14500 provides 500 W typical output power. - What power gain does the CGHV14500 achieve?
The CGHV14500 achieves approximately 17 dB power gain. - What drain efficiency does the CGHV14500 offer?
The CGHV14500 offers about 67% typical drain efficiency (70% reported at 85°C). - Are the inputs and outputs matched on the CGHV14500?
The input is internally pre‑matched, and the output is unmatched. - What package options are available for the CGHV14500?
The CGHV14500 is available in ceramic/metal flange and pill packages. - What applications is the CGHV14500 intended for?
Applications include radar, TACAN, IFF systems, and military telemetry. - What fabrication process is used for the CGHV14500?
The devices are made on Cree's 50 V 0.4 µm GaN-on-SiC foundry process.
