Fujitsu is sampling a 1Mbit SPI FRAM in an 8-pin WL-CSP device measuring 3.09×2.28×0.33mm which reduces the surface mounting area by 77%, and the device height by 80% compared to an S0P-8 package.
The WL-CSP package makes FRAM suitable for wearable and sensor applications which need small device dimensions, extremely low power consumption for maximum battery lifetime, and high endurance in write cycles in case of real time logging.
While conventional non-volatile memories like EEPROM or Flash memory are covering an endurance of the range of only 1 million write cycles, the MB85RS1MT FRAM device provides an endurance of 10 trillion read/write cycles, allowing a flexible storage of real time logging data. In contrast to the block access of EEPROM and Flash, FRAM can be overwritten fast and flexibly into each memory cell without any waiting time, so consuming less energy in the writing access, and helping extend the battery lifetime, especially for wearable / sensor applications with frequent logging functions.
The MB85RS1MT device operates in the voltage range of 1.8V – 3.6V and guarantees a data retention of 10 years at 85°C. The operation temperature ranges from -40°C to 85°C. This devicecomes in SOP-8 and 8pin WL-CSP packages.
The availability of the MB85RS1MT in the WL-CSP package will help wearable device manufacturers to design smaller, slimmer, and more functional products, and greatly extend battery life. Fujitsu Semiconductor as always continues to provide products and solutions that raise the value and utility of the customers’ applications.
For more detail: Fujitsu sampling 1Mbit FRAM in WL-CSP package