CISSOID, the leader in high temperature semiconductors for the most demanding markets, will present new High Temperature Gate Drivers, SiC MOSFET’s and IGBT Power Modules at PCIM 2019, the world’s leading exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management.
The company is introducing a new Gate Driver board optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125°C (Ta). This board, based on CISSOID HADES gate driver chipset, can also drive IGBT Power Modules whilst offering thermal headroom for the design of high density power converters in automotive and industrial applications. It enables high frequency (>100KHz) and fast SiC MOSFET’s switching (dV/dt>50KV/µs), improving efficiency and reducing size and weight of the power converters. The board is designed for harsh voltage environments supporting the drive of 1200V and 1700V power modules with isolation voltages up to 3600V (50Hz, 1min) and creepage distances of 14mm. Protection functions such as undervoltage lockout (UVLO), Active Miller Clamping (AMC) and Desaturation detection ensure the safe drive and reliable protection of the power module in case of fault events. “This new SiC Gate Driver board is the outcome of several years of developpement working with industry leaders in Automotive, Transportation and Aerospace markets. It combines CISSOID expertise in SiC Devices with our long experience in designing chips and electronic systems for harsh environments” says Etienne Vanzieleghem, CISSOID VP of Engineering.
In Nuremberg, CISSOID will also present new SiC MOSFET’s and IGBT Power Modules. A new discrete 1200V/40mOhms SiC MOSFET transistor is available in a TO-247 package and fully characterized from -55°C up to 175°C. This MOSFET features a drain-to-source On Resistance of 40mOhms at 25°C (Tj) and 75mOhms at 175°C (Tj). Low switching turn-on and turn-off energies, respectively 1mJ and 0.4mJ, are making this device ideal for efficient and compact DC-DC converters, power inverters and battery chargers. The company will also present two 62mm 1200VIGBT Power Modules with 200A and 300A current rating.
Read more: CISSOID TO EXHIBIT NEW HIGH TEMPERATURE GATE DRIVERS, SIC MOSFET’S AND POWER MODULES
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Ibrar Ayyub
I am an experienced technical writer holding a Master's degree in computer science from BZU Multan, Pakistan University. With a background spanning various industries, particularly in home automation and engineering, I have honed my skills in crafting clear and concise content. Proficient in leveraging infographics and diagrams, I strive to simplify complex concepts for readers. My strength lies in thorough research and presenting information in a structured and logical format.
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