While voice/speech-controlled embedded devices and systems are more popular thanks to the success of devices like the Amazon Alexa, their design is still quite a hassle due to the complexity of the engineering and algorithms involved. Since Alexa Skills became a thing, and Amazon opened up device APIs and SDKs that allow the integration of […]
QUICKLOGIC QUICKFEATHER ALEXA CLOSE-TALK REFERENCE DESIGN Read More »
Narrowband-IoT Connectivity over Satellite The partnership brings 5G-ready NB-IoT over satellite for the first time and delivers massive cost and interoperability advantages for the IoT industry Skylo, maker of the worldâs most affordable and ubiquitous network that connects any machine or sensor, today announced a partnership with Sony Semiconductor Israel (Sony, formerly known as Altair Semiconductor).
X-FAB Silicon Foundries, the leading analog/mixed-signal and specialty foundry, together with crowd-sourcing IC platform partner Efabless Corporation, today announced the successful first-silicon availability of the Efabless RISC-V System on Chip (SoC) reference design. This open-source semiconductor project went from design start to tape-out in less than three months using the Efabless design flow based on
X-FAB SILICON FOUNDRIES TAPES-OUT OPEN-SOURCE RISC-V MCU Read More »
Powerful new tool facilitates first-time-right analog & high voltage design implementation in even the most challenging of scenarios. Continuing to drive innovation in analog/mixed-signal IC fabrication, X-FAB Silicon Foundries SE (http://www.xfab.com/) has announced the introduction of SubstrateXtractor. Unwanted substrate couplings can impact modern IC developments, causing parasitic effects that are damaging to overall performance. Engineers
Munich, Germany â February 26, 2015 â Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has launched an ultra-high ±5cm resolution, miniature MEMS (Micro Electro Mechanical Systems) pressure sensor for use in mobile and wearable gadgets and IoT (Internet of Things) devices. The DPS310 is a low-power digital barometric pressure sensor that enables the development
Renesas Electronics Corporation announced the successful development of a new low-power SRAM circuit technology that achieves a record ultra-low power consumption of 13.7 nW/Mbitin standby mode. The prototype SRAM also achieves a high-speed readout time of 1.8 ns during active operation. Renesas Electronics applied its 65nm node silicon on thin buried oxide(SOTB) process to develop this record-creating SRAM prototype. This new low-power SRAM
RENESAS ELECTRONICS ACHIEVES LOWEST EMBEDDED SRAM POWER OF 13.7 NW/MBIT Read More »
Most of smartphones parts are made of silicons and other compounds, which are expensive and easily-breakable. This problem is making all of smart devices manufacturers looking for stronger and cheaper solutions. By combining a set of materials, a group of researchers have successfully discovered a new material which could finally finish the disaster of cracked smartphone
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Abstract The use of graphene in electronic devices requires a band gap, which can be achieved by creating nanostructures such as graphene nanoribbons. A wide variety of atomically precise graphene nanoribbons can be prepared through on-surface synthesis, bringing the concept of graphene nanoribbon electronics closer to reality. For future applications it is beneficial to integrate
Graphene Electronic Circuits with Atomic Precision Read More »
