The AFT09S282NR3 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 80 Watts Avg., Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Features
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Freescale Semiconductor has designed RF transistors which it claims will offer increased efficiency, peak power and signal bandwidth in future mobile basestations.
The AFT09S282N is a 900MHz, 28V LDMOS transistor which is capable of delivering 490W load pull peak power in OMNI plastic over-molded packaging.
The AFT18S230S is a 1.8 GHz, 28V RF power LDMOS transistor that is designed to deliver a symmetric Doherty efficiency of 45% and 17 dB of gain at 8 dB OBO.
The device is designed for use in asymmetric Doherty PAs.
The AFT21S230S is a 2.1 GHz 28V device designed to deliver 230W. Housed in NI-780S-6 packaging for VBW up to 100MHz, the product is designed for use in either symmetric or asymmetric Doherty applications. In symmetric deployment the product is engineered to deliver 45% efficiency at 8dB OBO and 15.5dB of gain.
The AFT18HW355S is an in-package Doherty device for high-power PCS- and DCS-band applications. Delivering 56 dBm of peak power in a single device with efficiency exceeding 48% at average power 8 dB OBO. Capable of operating at either 1805-1880 MHz or 1930-1995 MHz, this device uses an enhanced video bandwidth technology to enable full-band, multi-carrier operation.
The MMDS25254H ADAM is a sophisticated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) that allows phase and peaking adjustments from 2300 to 2800MHz. Product families for 700-1000MHz and 1800-2200MHz are also in development.
For more read: Freescale transistor drives claims silicon for basetstations
About The Author
Ibrar Ayyub
I am an experienced technical writer holding a Master's degree in computer science from BZU Multan, Pakistan University. With a background spanning various industries, particularly in home automation and engineering, I have honed my skills in crafting clear and concise content. Proficient in leveraging infographics and diagrams, I strive to simplify complex concepts for readers. My strength lies in thorough research and presenting information in a structured and logical format.
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