48 layer V NAND from Toshiba

48-layer V-NAND from Toshiba

Toshiba is sampling 3D NAND or V-NAND with 48 layers and a 2bit-per-cell architecture delivering a 128Gbit chip. Toshiba will start volume production of the chip at Fab2 at Yokkaichi which is currently under construction. V-NAND requires a unique tool-set. . The 48-layer device is aimed primarily at SSD. The more layers you can stack […]

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