(a) A low-magnification tunneling electron microscope (TEM) image of Gr–Si nanoparticle (NP). (b) A higher-magnification image for the same Gr–Si NP from the white box in a. (Insets) The line profiles from the two red boxes indicate that the interlayer spacing between graphene layers is ~3.4 Å, in good agreement with that of typical graphene layers […]
Samsung Researchers Nearly Double Lithium-ion Battery Capacity Read More »
PORTLAND, Ore. — The world’s most expensive semiconductor fabrication plant–at over $14 billion–was announced at the ground breaking ceremony Thursday (May 7) by Samsung. Located in the Godeok Industrial Complex at Pyeongtaek City Gyeonggi-do Province–called “Samsung Semiconductor Valley”–in South Korea, Samsung will be building 10-nanometer FinFET semiconductors there. “The new fabrication plant in Pyeongtaek constitutes
Samsung Building World’s Most Expensive Fab for 10-Nanometer FinFETs Read More »
he newest LPDDR4 is expected to significantly accelerate the adoption of high capacity mobile DRAM worldwide. The 12Gb LPDDR4 brings the largest capacity and highest speed available for a DRAM chip, while offering excellent energy efficiency, reliability and ease of design – all essential to developing next-generation mobile devices. “By initiating mass production of 12Gb
Samsung launches industry’s first 12Gb LPDDR4 DRAM Read More »
