Summary of STDRIVEG600 GATE DRIVER FOR GAN TRANSISTORS
STMicroelectronics’ STDRIVEG600 is a single-chip half-bridge gate driver for enhancement-mode GaN FETs or N-channel power MOSFETs, with a high-side rating to 600 V and suitability for bus voltages up to 500 V. It delivers high drive current, short 45 ns propagation delay, operation down to 5 V supply, ±200 V/ns dV/dt immunity, UVLO on both rails, overtemperature protection, interlocking to prevent cross-conduction, CMOS/TTL logic inputs down to 3.3 V, a shutdown pin, and is available in SO16 package or as wafer dice.
Parts used in the STDRIVEG600 project:
- STDRIVEG600 single-chip half-bridge gate driver (SO16 package)
- STDRIVEG600 wafer/dice option
- Enhancement-mode GaN FETs (driven device type)
- N-channel power MOSFETs (driven device type)
- Bootstrap diode
STMicroelectronics’ single-chip half-bridge gate driver is designed for enhancement mode GaN FETs or N-channel power MOSFETs
STMicroelectronics’ STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can drive high-speed silicon and GaN FETs thanks to the high current capability, short propagation delay of 45 ns in typical conditions, and operation with a supply voltage down to 5 V. The dV/dt immunity is high: ±200 V/ns. The STDRIVEG600 is a robust driver featuring overtemperature protection and UVLO function on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions.
The interlocking function avoids cross-conduction conditions. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP. A dedicated pin for shut down functionality is also available. The package is SO16. STDRIVEG600 is offered both in package part (PN is STDRIVEG600) and in wafer for dice business (PN is STDRIVEG600w).
Features
- Voltage rail to 600 V
- Up to 20 V gate driver
- 5.5 A / 6 A sink/source currents
- 45 ns short propagation delay
- Bootstrap diode
- Separated ON-OFF outputs for easy gate driving tuning
- 3.3 V / 5 V logic inputs
- UVLO on VCC and VBOOT
- Thermal shutdown
- Interlocking function
- Shutdown pin
- SO16 package
Read more: STDRIVEG600 GATE DRIVER FOR GAN TRANSISTORS
- What is the maximum voltage the high-side section can withstand?
The high-side section is designed to stand a voltage up to 600 V. - What bus voltage is the STDRIVEG600 suitable for?
It is suitable for applications with bus voltage up to 500 V. - Can the STDRIVEG600 drive GaN FETs and MOSFETs?
Yes, it is designed for enhancement-mode GaN FETs or N-channel power MOSFETs. - What are the sink and source current capabilities?
It provides 5.5 A sink and 6 A source currents. - What is the typical propagation delay?
The typical short propagation delay is 45 ns. - What logic input voltage levels are supported?
Logic inputs are CMOS/TTL compatible down to 3.3 V and support 5 V logic. - Does the device include protection features?
Yes, it features overtemperature protection, UVLO on VCC and VBOOT, and an interlocking function. - Is there a shutdown control available?
Yes, a dedicated shutdown pin is available. - What package is the STDRIVEG600 offered in?
It is offered in an SO16 package and also available as wafer/dice (STDRIVEG600w).
