News & Updates

RESEARCHERS DEVELOP LONG RANGE BACKSCATTER SENSORS THAT CONSUME ALMOST NO POWER

RESEARCHERS DEVELOP LONG RANGE BACKSCATTER SENSORS THAT CONSUME ALMOST NO POWER

Researchers at the University of Washington developed a new backscatter sensors that can operate over long ranges with very little power. The researchers demonstrated for the first time that the device runs on almost zero power and can transmit data across distances of up to 2.8 kilometers. Backscatter communication works by emitting a radio signal and then monitoring the reflections

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LT8362 LOW IQ BOOST OR SEPIC OR INVERTING CONVERTER WITH 2A 60V SWITCH

LT8362 – LOW IQ BOOST/SEPIC/INVERTING CONVERTER WITH 2A, 60V SWITCH

Features Wide Input Voltage Range: 2.8V to 60V Ultralow Quiescent Current and Low Ripple Burst Mode® Operation: IQ = 9µA 2A, 60V Power Switch Positive or Negative Output Voltage Programming with a Single Feedback Pin Programmable Frequency (300kHz to 2MHz) Synchronizable to an External Clock Spread Spectrum Frequency Modulation for Low EMI BIAS Pin for Higher Efficiency n

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TERAHERTZ ELECTRONICS – WAY TO BRIDGE THE LARGELY UNTAPPED REGION BETWEEN 100GHZ AND 10THZ

TERAHERTZ ELECTRONICS – WAY TO BRIDGE THE LARGELY-UNTAPPED REGION BETWEEN 100GHZ AND 10THZ

The terahertz (THz) region, which is based on 1THz frequency, separates electronics from photonics and has been difficult to access for ages. Semiconductor electronics cannot handle frequencies equal to or greater than 100GHz due to various transport-time related limitations. In other hand, photonics devices fail to work below 10THz as photon’s energy significantly drops to thermal energy. Terahertz

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NEW ULTRATHIN SEMICONDUCTORS CAN MAKE MORE EFFICIENT AND TEN TIMES SMALLER TRANSISTORS THAN SILICON

NEW ULTRATHIN SEMICONDUCTORS CAN MAKE MORE EFFICIENT AND TEN TIMES SMALLER TRANSISTORS THAN SILICON

The researchers at Stanford University have discovered two ultrathin semiconductors – hafnium diselenide and zirconium diselenide. They share or even exceed some of the very important characteristics of silicon. Silicon has a great property of forming “rust” or silicon dioxide (SiO2) by reacting with oxygen. As the SiO2 acts as an insulator, chip manufacturers implement this property to isolate their circuits on

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RESEARCHERS DEVELOPED VO2 BASED MEMS MIRROR ACTUATOR THAT REQUIRES VERY LOW POWER

RESEARCHERS DEVELOPED VO2 BASED MEMS MIRROR ACTUATOR THAT REQUIRES VERY LOW POWER

joint research by the US Air Force Research Laboratory Sensors Directorateand Michigan State University have developed micro-electromechanical systems (MEMS) actuator based on smart materials, specifically vanadium dioxide (VO2). In the room temperature, Vanadium dioxide exhibits the Mott transition. It is a not-well-understood phenomenon known to occur in transition metal chalcogenides and transition metal oxides. The research team was able to use VO2

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PCB123® LAUNCHES ACCESS TO MILLIONS OF CLOUD BASED SYMBOLS FOOTPRINTS

PCB123® LAUNCHES ACCESS TO MILLIONS OF CLOUD-BASED SYMBOLS & FOOTPRINTS

Designers can now search SnapEDA’s vast component library directly in PCB123 MULINO, OR and SAN FRANCISCO, CA  (PCB123, and SnapEDA, the Internet’s first parts library for circuit board design, are launching a new integration that allows designers to search for digital models directly inside the PCB123 design environment. Designers have traditionally wasted days creating digital models

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