Description
The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire® bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip. The communication follows the 1-Wire protocol with a 64-bit registration number acting as node address in the case of a multiple-device 1-Wire network.
Key Features
- High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization
- Resistant Up to 75kGy (kiloGray) of Gamma Radiation
- Reprogrammable 248 Bytes of User Memory
- Lower Block Size Provides Greater Flexibility in Programming User Memory
- Memory is Organized as 8-Byte Blocks
- Each Block Can Be Written 8 Times
- User-Programmable Write Protection for Individual Memory Blocks
- Advanced 1-Wire Protocol Minimizes Interface to Just Single Contact
- Compact Package and Single IO Interface Reduces Board Space and Enhances Reliability
- Unique Factory-Programmed, 64-Bit Identification Number
- Communicates at 1-Wire Standard Speed (15.3kbps max) and Overdrive Speed (76kbps max)
- Operating Range: 3.3V ±10%, -40°C to + 85°C Reading, 0°C to +50°C Writing
- ±8kV HBM ESD Protection (typ) for IO Pin
- 6-Pin TDFN Package
For more detail: Gamma Radiation Resistant 1-Wire Memory
