Nantero have announced that their innovative memory technology based on carbon nanotubes has been licensed and is in production in many fabrication facilities around the world. NRAM memory offers a significant speed advantage, (said to be hundreds of times faster than conventional NAND memory) and can be easily scaled to provide terabits of storage capacity which consume very little power.
Key Features of NRAM technology:
CMOS Compatible: Works in standard CMOS fabs with no new equipment needed
Limitless Scalability: Designed to scale below 5nm in the future
High-Endurance: Proven to operate for orders of magnitude more cycles than flash
Faster Read and Write: Same as DRAM, 100s of times faster than NAND
High Reliability: will retain memory for >1,000 years at 85 degrees Celsius or more than 10 years at 300 degrees Celsius
Low Power: Essentially zero in standby mode, 160x lower write energy per bit than NAND
Low Cost: Simple structure, can be 3D multi-layer and multi-level cell (MLC)
For more detail: NRAM is the future
