Gamma Radiation Resistant 1-Wire Memory

Description

The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire^® bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip. The communication follows the 1-Wire protocol with a 64-bit registration number acting as node address in the case of a multiple-device 1-Wire network.

Key Features

• High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization
  • Resistant Up to 75kGy (kiloGray) of Gamma Radiation
  • Reprogrammable 248 Bytes of User Memory
• Lower Block Size Provides Greater Flexibility in Programming User Memory
  • Memory is Organized as 8-Byte Blocks
  • Each Block Can Be Written 8 Times
  • User-Programmable Write Protection for Individual Memory Blocks
• Advanced 1-Wire Protocol Minimizes Interface to Just Single Contact
• Compact Package and Single IO Interface Reduces Board Space and Enhances Reliability
  • Unique Factory-Programmed, 64-Bit Identification Number
  • Communicates at 1-Wire Standard Speed (15.3kbps max) and Overdrive Speed (76kbps max)
  • Operating Range: 3.3V ±10%, -40°C to + 85°C Reading, 0°C to +50°C Writing
  • ±8kV HBM ESD Protection (typ) for IO Pin
  • 6-Pin TDFN Package

For more detail: Gamma Radiation Resistant 1-Wire Memory